Data storage gets wired up
Nanowire phase change memory was up for discussion in symposium JJ. Ritesh Agarwal of the University of Pennsylvania, US, has been putting Ge2Sb2Te5 nanowires through their paces to evaluate the material as a “universal memory” device. The results to-date are impressive with write speeds of less than 50 ns and an estimated data retention of 100,000 years for a wires just 20 nm in diameter.
TrackBack URL for this entry: