Researchers at Nanyang Technological University in Singapore have demonstrated the synthesis of InN nanofingers on silicon substrates using a novel ion-beam assisted filtered cathodic arc technique at low temperature. Central to the method is the interaction of reactive nitrogen ions with energetic indium plasma on a lattice mismatched substrate.

The InN nanofingers exhibited excellent field emission properties - low threshold field, high emission current and stable emission. These characteristics may find application in robust field emitters for vacuum devices. The team is also investigating the transport properties of the InN nanofingers as they may be promising for high-frequency field effect transistors. What's more, the technique should be capable of fabricating useful nanostructures from other group III nitride semiconductors.