Potential applications of this novel nanowire-based TERS solution reside especially in the fields of bio-medical, life sciences and security. Important applications are also expected in solid-state research, e.g. in silicon technology where the detection of materials composition, doping, crystal orientation and lattice strain can be probed by Raman spectroscopy.

We are looking forward to exploiting our novel nanowire-TERS tips in interdisciplinary collaborations in the aforementioned fields. It is our aim that based on this technique it will be possible to locally measure the built-in strain in a transistor that makes use to straining silicon at levels close to one-tenth of the theoretical strength of silicon. How this could potentially work is shown in the figure.