Jun 13, 2008
Acoustic charge transport in GaN nanowires
Self-organized structures using “bottom up” approaches are expected to play an important role in future nanoelectronics. Intense research involving self-organized one-dimensional structures like carbon nanotubes and semiconductor nanowires is ongoing. Among other semiconductors GaN as a wide-bandgap material, turns out to be a promising candidate for novel nanowire devices. Additionally, for almost three decades there has been an increasing interest in acoustic charge transport driven by applications in analogue signal processing. In acoustic charge transport devices, the dynamic piezoelectric potential of a surface acoustic wave (SAW) is able to convey charges in the wave propagation direction.
The presented method and our experimental findings open up a route towards new acoustic charge transport nanostructure devices in a wide-bandgap material such as GaN.
About the author
J Ebbecke recently received a lectureship at Heriot-Watt University after working for four years as a research assistant in the group of A Wixforth in Augsburg. S Maisch is a PhD student at the University of Augsburg. A Wixforth heads a research group on nanotechnology and nanophysics at the University of Augsburg. R Calarco has been working for four years on III-nitride nanowires and has been group leader at the Institute of Bio and Nano-systems at Research Centre Jülich for seven years. R Meijers is a former PhD student at the Institute of Bio and Nano-systems at Research Centre Jülich. M Marso is group leader of III-V and III-nitride device activities at the Institute of Bio and Nano-systems at Research Centre Jülich. H Lüth is professor emeritus at the RWTH Aachen and former director of the Institute of Bio and Nano-systems at Research Centre Jülich.