In a systematic experimental study that was recently published in Nanotechnology the acoustic charge transport in self-organized GaN nanowires was investigated. First, GaN nanowires were grown by molecular beam epitaxy on a silicon substrate. Then they were released from the initial substrate and spread on a piezoelectric host material. Afterwards, the nanowires were aligned by the use of a SAW in a microfluidic scheme. This SAW was then used to create an acoustoelectric current in the GaN nanowires. Here, the dynamic piezoelectric potential of the SAW acts like a conveyor belt for charges in the wire, leading to a well-defined electric current, which was detected as a function of surface acoustic wave related parameters. The present work has been performed on nominally undoped GaN nanowires, future work will focus on doped nanowires and p-i-n junctions in order to proof the potentiality of our nanodevice concept.

The presented method and our experimental findings open up a route towards new acoustic charge transport nanostructure devices in a wide-bandgap material such as GaN.