The research reveals that for short semi-metallic nanotubes, the mechanisms of interaction, and consequently the sensing mechanisms, are bias dependent. When the applied bias (in volts) is numerically less than the small bandgap of the tubes (in eV), the transport mechanism in the tube is dominated by intraband carrier flow.

When the bias numerically exceeds the bandgap, however, band-to-band tunneling becomes the dominant transport mechanism. Accordingly, sensing in the former bias range is controlled by quantum-mechanical reflections induced by the adsorbed analyte, while in the latter, tunneling-width modulation primarily determines the sensing current.