Charge control in the vast majority of semiconductor devices is based on electron or hole carriers ionized from dopant atoms intentionally introduced into the semiconductor crystal. In contrast, polarization-induced carriers do not originate from dopant atoms and thus avoid deleterious ionized impurity scattering. Furthermore, it is possible to design a nanowire with a large accumulation of polarization-induced holes and electrons at opposing facets. The close proximity of the two polarization-induced charges could lead to nanowire light emitters or photovoltaics with enhanced efficiency.

The researchers presented their work in the journal Nanotechnology.