High-resolution transmission electron microscopy (HRTEM) and TEM measurements were performed to investigate the microstructural properties of the PMMA/UGS/PMMA films. Current–voltage (I–V) measurements on the Al/PMMA/UGS/PMMA/indium tin oxide (ITO)/poly(ethylene terephthalate) (PET) devices at 300 K showed a current bistability due to the existence of the UGS, indicative of charge storage in the UGS.

Before and after bending

Using current–voltage (I–V), current–time (I–t) and current–cycle data, the BOM device was characterized before and after bending to examine the electrical performance and memory stability of the unit. The test rig includes bending tools with three different radii of surface curvature.

The I–V results reveal electrical bistable behaviour before and after bending. It is worth noting that the flexible organic memory device showed very similar performance to graphene-embedded BOM, when referring to values such as the maximum Ion/Ioff ratio of the I–V curves of 5 × 106, a retention stability of 4.8 × 104 s and endurance to electrical stress above 1 × 105 cycles.

The memory characteristics of the BOM devices compared well before and after bending and were stable during repetitive mechanical bending. These results indicate that flexible BOM devices based on UGS and PMMA polymer composites hold promise for potential applications in next generation transparent flexible nonvolatile memory devices.

Additional information including full test results can be found in the journal Nanotechnology.