The basic idea of the new approach is a CRS cell where both resistive switching cells have similar switching characteristics, but are distinguishable by different capacities. The concept was invented by a team of researchers from RWTH Aachen University and Forschungszentrum Jülich headed by Rainer Waser. Resistive switching memory cells were prepared by high-pressure sputtering of CMOS compatible TiO2 and SiO2.

In the work, theoretical calculations and circuit simulations are backed up by ultra short pulse measurements down to 50 ns and take advantage of the nonlinear switching kinetics.

The results of the study show that stored information can be read sufficiently by the new approach, which has the prospect of a fast and power-saving readout scheme for passive crossbar arrays without a read cycle limitation due to low endurances.

More details can be found in the journal Nanotechnology.