Lab talk
Nov 18, 2011
Sub-nanosecond switching of memristors with real-time monitoring of switching dynamics
Memristors are promising candidates for future high-density nonvolatile memories given their demonstrated desirable properties such as endurance on the order of 1 trillion cycles, electroforming-free operation, compatibility with complementary metal-oxide-semiconductor (CMOS) processes, and the ability to be integrated in high-density cross-bar arrays. Other envisioned applications include digital logic, synaptic and hybrid circuits. For many of these applications evaluating the high-speed dynamical properties of memristors, including the switching speed, is paramount.
Recently, researchers at Hewlett-Packard Laboratories have demonstrated a platform for conducting broadband dynamical studies of impedance mismatched memristors with real-time monitoring of the device voltage and current. Tantalum oxide memristors were integrated into coplanar waveguide (CPW) structures and reproducible resistance switching on the order of 100 ps was shown.
Promising platform
The measured switching speed of this nonvolatile memory element is comparable to or faster than mainstream volatile memories such as DRAM and SRAM, and four orders of magnitude faster than mainstream nonvolatile Flash.
The study of the high-speed current-voltage dynamics of memristors in real time opens new avenues not only to better understand the associated resistance switching mechanism, but also to better engineer the device and its operation for improved performance. Applications of memristors in high-speed high-frequency circuits can also be envisioned.
The group presented its work in the journal Nanotechnology.
About the author
This research was carried out by the nanoelectronics research group at Hewlett-Packard Laboratories. The team for this work included researchers Dr Antonio Torrezan, Dr John Paul Strachan, Dr Gilberto Medeiros Ribeiro and group director HP Senior Fellow Dr Stanley Williams. This work is partially sponsored by the US Government's Nano-Enabled Technology Initiative.
