Recently, researchers at Hewlett-Packard Laboratories have demonstrated a platform for conducting broadband dynamical studies of impedance mismatched memristors with real-time monitoring of the device voltage and current. Tantalum oxide memristors were integrated into coplanar waveguide (CPW) structures and reproducible resistance switching on the order of 100 ps was shown.

Promising platform

The measured switching speed of this nonvolatile memory element is comparable to or faster than mainstream volatile memories such as DRAM and SRAM, and four orders of magnitude faster than mainstream nonvolatile Flash.

The study of the high-speed current-voltage dynamics of memristors in real time opens new avenues not only to better understand the associated resistance switching mechanism, but also to better engineer the device and its operation for improved performance. Applications of memristors in high-speed high-frequency circuits can also be envisioned.

The group presented its work in the journal Nanotechnology.