Retention time is an important parameter that is used to evaluate memory performance. In this study, the memory devices showed stable characteristics over 104 s with no significant current fluctuations.

Reliable operation

A statistical cell-to-cell uniformity analysis was performed to confirm reliable memory operation. Although the OFF states were relatively broad, the ON states were well separated from the OFF states, allowing the two states to be distinguished.

Using conductive atomic force microscopy, the scientists found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism.

Full details can be found in the journal Nanotechnology.