Jun 15, 2012
KAIST assembles ultra-high-density flexible phase-change memory
Jeong Yong Lee’s group at Korea Advanced Institute of Science and Technology (KAIST) has successfully fabricated mushroom-shaped ultra-high-density phase-change memory (with a storage density of around 176 Gbit/in2) on flexible glass-fabric reinforced hybrid material (GFR Hybrimer).
The team made the device using block copolymer lithography and single-step dry etching using a gas mixture of Ar/Cl2, which is convenient and cost-effective, and could provide the basis for other high-density memory fabrication processes.
The directed self-assembly of block copolymer thin films in conjunction with conventional photolithography, such as ArF or I-line lithography, facilitates low-cost, large-area, device-oriented nanopatterning of dense sub-10-nm scale features.
The GFR Hybrimer substrate exhibits excellent flexibility and thermal/chemical stability. In the study, the flexible cell array was bent to a bending diameter of 4 mm without any cracking.
The phase-change materials (In3Sb1Te2) used in the work inherently possess multi-level resistance that originates from structural transformations such as InSb, In3Sb1Te2, InTe. It is expected that the multi-level property can potentially increase the capacity of phase-change memory.
Additional details can be found in the journal Nanotechnology.
About the author
Jong Moon Yoon, is a PhD candidate from the Jeong Yong Lee group based in the Electron Microscopy Laboratory, Department of Materials Science and Engineering, KAIST, Korea. He is currently investigating high-density flexible phase-change memory via block copolymer lithography and electrical measurement. The group has been conducting studies on solar cells, thermoelectric materials, graphene liquid cells, and Li-ion batteries. In particular, this group specializes in sample characterization using electron microscopy.