The team made the device using block copolymer lithography and single-step dry etching using a gas mixture of Ar/Cl2, which is convenient and cost-effective, and could provide the basis for other high-density memory fabrication processes.

The directed self-assembly of block copolymer thin films in conjunction with conventional photolithography, such as ArF or I-line lithography, facilitates low-cost, large-area, device-oriented nanopatterning of dense sub-10-nm scale features.

The GFR Hybrimer substrate exhibits excellent flexibility and thermal/chemical stability. In the study, the flexible cell array was bent to a bending diameter of 4 mm without any cracking.

Multi-level resistance

The phase-change materials (In3Sb1Te2) used in the work inherently possess multi-level resistance that originates from structural transformations such as InSb, In3Sb1Te2, InTe. It is expected that the multi-level property can potentially increase the capacity of phase-change memory.

Additional details can be found in the journal Nanotechnology.