Developers are looking to overcome barriers towards the miniaturization of ICs and the use of novel materials in conjunction with bottom-up fabrication methods may help to address these challenges. In addition, the room temperature and ambient processing capabilities of this bottom-up directed assembly approach could also contribute to lowering fabrication costs.

Reporting their study in the journal Nanotechnology, Jun Huang and colleagues from the Center for High-rate Nanomanufacturing have investigated the integration of a heterogeneous system for device applications by fabricating a prototype of a complementary inverter composed of carbon nanotubes and molybdenum disulfide as the conductive channel for p-type and n-type transistors, respectively.

The complementary inverter shows a high-voltage gain of about 1.5. Directed assembly has been utilized to integrate the complementary inverter via a bottom-up approach, which provides an alternative cost-effective methodology to complementary metal–oxide–semiconductors, laying the foundation for the realization of high-performance logic circuits.

More information is available in the journal Nanotechnology.