Lab talk
Aug 23, 2012
Drastically different 1D and 2D nanomaterials integrated in test device
Scientists from the NSF Nanoscale Science and Engineering Center for High-rate Nanomanufacturing at Northeastern University (Boston, Massachusetts, US) have demonstrated a methodology for integrating various nanomaterials to create next-generation electronics. The technique involves a combination of conventional CMOS top-down processes and bottom up methods such as directed assembly. To test the approach, the group has fabricated a complementary inverter composed of 1D and 2D nanomaterials. Preliminary results show that the different nanostructures, in this case carbon nanotubes and molybdenum disulfide, can be heterogeneously integrated as functional components in a logic circuit. The exceptional flexibility and electrical properties of these nanomaterials makes them excellent candidates for potential applications in future transistors and flexible electronics.
Developers are looking to overcome barriers towards the miniaturization of ICs and the use of novel materials in conjunction with bottom-up fabrication methods may help to address these challenges. In addition, the room temperature and ambient processing capabilities of this bottom-up directed assembly approach could also contribute to lowering fabrication costs.
Reporting their study in the journal Nanotechnology, Jun Huang and colleagues from the Center for High-rate Nanomanufacturing have investigated the integration of a heterogeneous system for device applications by fabricating a prototype of a complementary inverter composed of carbon nanotubes and molybdenum disulfide as the conductive channel for p-type and n-type transistors, respectively.
The complementary inverter shows a high-voltage gain of about 1.5. Directed assembly has been utilized to integrate the complementary inverter via a bottom-up approach, which provides an alternative cost-effective methodology to complementary metal–oxide–semiconductors, laying the foundation for the realization of high-performance logic circuits.
More information is available in the journal Nanotechnology.
About the author
The researchers involved in this study are members of the NSF Nanoscale Science and Engineering Center for High-rate Nanomanufacturing at Northeastern University in Boston, Massachusetts, US. The centre is developing tools and processes to conduct fast large-scale directed assembly and transfer of nanoscale elements for manufacturing nanotechnology-based devices in electronics, energy, materials and biotechnology sectors. Dr Jun Huang is a postdoctoral researcher whose research focuses on 1D and 2D nanostructures for nanoelectronic applications. Dr Sivasubramanian Somu is a research scientist whose research focuses on low-dimensional nanostructures and nanoelectronics. Prof. Ahmed Busnaina is director of the Center for High-rate Nanomanufacturing (CHN) and his research focuses on directed assembly and transfer of nanomaterials.
