Conduction through the device is strongly suppressed in the low-bias regime, reminiscent of gap formation. At a sufficiently high bias, charge transport is completely determined by the applied high electric field, independent of T. Such an effect could be beneficial for applications in T-insensitive devices such as low-T amplifiers stable over a range of T, and low-power devices.

By fitting their results to theoretical models, the researchers show that charge-charge interactions are dominant in the hydrogenated material. Applying a magnetic field perpendicular to the plane of graphene can decrease the resistance of the device. A high electric field can also drastically reduce the resistance of the device. Therefore delocalization of carriers can be achieved simply by applying either an electric field or a magnetic field.

Full details can be found in the journal Nanotechnology.