One approach, being pursued by researchers from Nanjing University in China and the National Institute for Materials Science in Japan, is to synthesize Ta3N5 nanobelts by aminolysis of TaS3 nanobelt templates. Using the sample, the team has fabricated a field-effect-transistor (FET), and found that the device exhibits high ultraviolet-visible (UV-vis) photosensitive properties. The photocurrent increased by nearly 10 times the dark current under 450 nm light irradiation at an applied voltage of 5.0 V.

More information can be found in the journal Nanotechnology.