Jul 17, 2013
Modified deposition structure delivers super-high density Si quantum dot thin film
A gradient Si-rich oxide (GSRO) multilayer (ML) deposition structure has been shown to deliver super-high density Si quantum dot (QD) thin film, while preserving QD size controllability – a result that could benefit photovoltaics (PV) based on integrated QDs
Reporting their work in the journal Nanotechnology (24 195701), researchers from National Chiao Tung University, Taiwan, explain that the Si QD thin film formed using a GSRO ML structure offers improved PV properties compared with samples based on a [SiO2/SRO] ML structure thanks to enhanced optical absorption and carrier transport.
Also, since a Si QD thin film utilizing a heavily doped [SiO2/SRO] ML structure can exhibit better carrier transport properties than a generally doped one, the team believes that it is feasible to further improve the PV properties by employing a heavily doped GSRO ML structure.
Full details can be found in the journal Nanotechnology.
Further reading -
About the author
This study was performed by Prof. Po-Tsung Lee’s group from the Department of Photonics and the Institute of Electro-Optical Engineering at National Chiao Tung University (NCTU), Taiwan. Prof. Lee has been highly focused on photonics technology developments for many years. Her recent research interests include semiconductor photonic crystal active and passive devices and their applications, metallic nanostructures with localized surface plasmon resonances, and silicon-based solar cell technologies. Kuang-Yang Kuo and Pin-Ruei Huang are PhD students at the Institute of Electro-Optical Engineering, NCTU, Taiwan. They work on the development of Si QD thin films for third-generation Si-based solar cells. So far, they have not only realized super-high density Si QDs embedded in a SiO2 matrix by a GSRO-ML structure, but have also successfully integrated Si QDs into a ZnO matrix, which is a material of high transparency and widely tunable electrical properties. Prof. Po-Tsung Lee’s group will continue to develop third-generation Si-based SCs integrating Si QDs.