Researchers generally use SiO2 and high-dielectric oxides like aluminium oxide (Al02O3) and hafnium oxide (HfO2) for memory structures. Our groups have chosen rare-Earth GdO2O3 oxide, which can be epitaxially deposited on Si (111) for integrating Si and SiGe QDs. We used capacitance-voltage and conductance-voltage measurements to characterize the effect of quantum dots, interfaces, and trapped charges on the charge storage properties.

Our analyses show that multilayer Si QDs exhibit superior properties compared with their single-layer counterparts, and that incorporating Ge further enhances device performance. This is the first report on the charge storage behaviour using multilayer quantum dots within epitaxial rare-Earth based oxides exhibiting excellent memory characteristics.

The researchers presented their results in the journal Nanotechnology (in press).

Further reading

Controlled quantum conductance in resistive switches highlights opportunity for atomic-scale memory (Mar 2012)
I-V study details flexible organic memory device (Jun 2009)
Nanowire memory could write data faster (Dec 2006)