The researchers find that the un-passivated BP field-effect transistor (FETs) display fast degradation upon ambient exposure. In contrast, few-layer black phosphorus passivated by SiO2 exhibit greatly improved n-type charge transport, demonstrating a high retained on/off current ratio of over 600 and a high mobility of ~ 500 cm2 V-1s-1.

This passivation method represents a facile route for achieving environmentally air-stable black phosphorus devices, enabling the study of intrinsic material properties and providing a means to exploit their potential applications.

More information about this research can be found in the journal Nanotechnology 26 435702.

Further reading

Reviewing 2D non-graphene materials (Jul 2015)
Ultraclean hexagonal boron nitride for flexible devices (Jun 2015)
Enhancing dielectric growth with two-dimensional materials (Aug 2014)