Latest News articles

Sign-up benefits

Unlimited site access

Newswire

Sign up to receive a newswire from nanotechweb.org and get the latest research and industry news delivered directly to your desk.

Free company listing

List your company on nanotechweb.org free of charge, or become a Corporate Partner and take advantage of the enhanced benefits that this status offers. Make sure that potential customers can find the products that you sell.

Post your new products online

If you have a new product to promote and you want to tell people about it, post it on nanotechweb.org. List your product free of charge or upgrade to Star Product status and benefit from guaranteed homepage exposure for one week.

Have your say

Sign up and get the opportunity to comment on our stories. We are always interested in your opinion and will be looking for your feedback.

Running an event?

Our events listing is free so, if you are organizing an event, post it on nanotechweb.org.

Corporate partners

For maximum exposure, become a Corporate partner. Contact our sales team.

Buyer’s Guide

Technology update

Sep 5, 2007

Doped nanowire transistors make their debut

Group IV semiconductor alloys are ideal for applications in electronics and optoelectronics thanks to their large range of crystal lattices and energy band gaps. Now, Moon-Ho Jo of Pohang University of Science and Technology in Korea and colleagues have made both n- and p-doped nanowire field-effect transistors (FETs) out of silicon and germanium for the first time. The result opens up the way for a wide range of applications, such as light-emitting diodes, photodetectors and high-speed logic circuits, for these materials.

We hope you've enjoyed the short summary of this article. To continue reading, and for unlimited access to all content on this site you will need to complete a short sign-up process. It's free of charge, and will only take a couple of minutes of your time. If you've signed up before, simply sign in below.