Technology update
Sep 25, 2007
C60 transistor breaks new records
High-performance field effect transistors made from fullerene have been successfully developed by scientists at the Georgia Institute of Technology, US. The devices, which are very stable, have electron-mobility values that outperform amorphous silicon, low threshold voltages and large on-off ratios. They can also be fabricated at room temperature, which makes them compatible with any substrate, including flexible plastic.
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