Defects in Semiconductors (ICDS-25), 25th International Conference

The conferences in this series are currently held every two years. Their goal is to provide a forum at which researchers studying defects in semiconductors could share their most recent findings with colleagues and thereby would advance the understanding in this technologically and scientifically important field.

The scope of ICDS-25 covers basic and applied research on point and extended defects, shallow and deep impurities (including magnetic impurities) in bulk materials, in low-dimensional structures, nanoscale structures, and oxide layers as well at interfaces. Problems related to defect engineering in photovoltaics and spintronics will be reflected in the programme of the meeting. Materials of current interest include the group-IV semiconductors and their alloys, II-V and II-VI compound semiconductors, III nitrides and alloys, organic and magnetic semiconductors.

Most of the problems to be discussed at ICDS-25 are relevant to the applied aspects of modern semiconductor materials widely used in the fabrication of electronic and optoelectronic devices. The results of such discussions will give an impressive stimulus to the progress in semiconductor processing and technology.

Topics

* Defects in diamond, Si, Ge, SiGe, and SiC
* Defects in compound semiconductors
* Magnetic impurities
* Defects in organic semiconductors
* Microscopic studies of defects
* Positrons and muons in defect studies
* Defects at interfaces
* Defects in nanostructures and devices
* Defect engineering
* Spintronics and photovoltaics

Language - the official conference language is English.