SiC(Silicon Carbide) Wafer Feb 20, 2012
Xiamen Powerway Advanced Material Co.,Ltd
huli developing zone, xiamen
PWAM offers semiconductor materials,SiC substate for GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices. Avalaible Plane:a-plane or c-plane 6H-SiCand 4H-SiC wafers.
PWAM offers SiC substate,N type and Semi-insulating. Available size:4Inch(100mm),3Inch(76.2mm),2Inch(50.80mm),30*30mm,20*20mm,10*10mm,5*5mm. polytype 4H and 6H in different quality grades,Micropipe Density (MPD): Free,<5/cm2,<10/cm2,<30/cm2,<50/cm2,<100/cm2.Application: for GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.Avalaible Plane:a-plane or c-plane 6H-SiC wafers and 4H-SiC wafers.
Avalaible Orientation: on axis C(0001),4 degree,8 degree off-axis 4H-SiC and 6H-SiC wafer
Silicon Carbide epitaxy Avalable.