EBV 40A1 Electron Beam Evaporator Mar 9, 2010

The EBV 40A1 electron beam evapourator is designed for ultra-pure sub-monolayer and multilayer thin film growth by molecular beam epitaxy. Precisely controlled and monitored evapouration delivers deposition rates from as low as 1/10 monolayer per minute with full PID controlled flux regulation. Multi-channel water-cooling ensures ultra-low background pressure (typically in the 10-10 mbar range) during evapouration enabling growth of ultra-pure layers. The precisely defined evaporant beam means highly uniform deposition on the sample, the deposition area being determined by the distance from the source to the sample and the choice of one of the easily exchangeable exit apertures. The instrument is configured with choice of manual or automatic shutter.

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