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Product details

STE3N3 MBE System for III-Nitrides growth Dec 3, 2013

Company details

Engels avenue, 27, bld. 5, lit.A
Russian Federation

Tel: +2 812 633 05 96

Advanced MBE Systems for high-temperature epitaxial growth of III-Nitrides

MBE systems of STE3N* series are specially designed with consideration to specific A3N materials growth. STE3N* successfully resolved the problem of providing extremely high temperatures on the substrate (> 1200°C) as well as reliable work of heating stage during a long growth cycle. It allows to grow high-quality, thick AlN/AlGaN buffer layers using ammonia as active nitrogen source. This technology results in growth of active layers with extremely low dislocation density, record for MBE. STE3N* series is represented in two-(STE3N2) and three-chamber (STE3N3) versions, the last one is equipped with buffer preparation chamber. Maximum wafer diameter 100 mm.


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