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Product details

STE3526 Two-reactor MBE complex for growth of hybrid heterostructures А3В5/А2В6 Dec 3, 2013

Company details

Engels avenue, 27, bld. 5, lit.A
Russian Federation

Tel: +2 812 633 05 96

Two-reactor STE3526 MBE System is specially designed for growth of hybrid heterostructures А3В5/А2В6 taking into account all specific of MBE growth of these material systems.

STE3526 is intended for R&D activities and pilot production of epitaxial nanostructures on the base of wide
band А2В6 materials (Cd(Zn)Se/ZnMgSSe etc.) using of high-quality GaAs buffer layers, previously grown
in А3В5-reactor.
The specific feature of the System is providing of ultra-pure UHV transport of wafers from А3В5-reactor to А2В6
one avoiding uncontrolled contaminations of GaAs growth interface.
Key advantages:
• “lab to fab” ideology, allowing carrying out activities from fundamental research to pilot production
of heterostructures
• special effusion cells for Al (cold lip) for stable operation and Ga (hot lip) for obtaining of structures with low density of oval defects


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