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Product details

STE RTP150 System for rapid thermal processing Dec 3, 2013

Company details

Engels avenue, 27, bld. 5, lit.A
Russian Federation

Tel: +2 812 633 05 96

System for high-temperature treatment of semiconductor wafers in controlled gas, vacuum, oxidizingor deoxidizing atmosphere

Special design of aluminum chamber allows carrying out thermal annealing at extremely high temperatures (up to 1300°С) in combination with long annealing time (up to 60 min). This system can be used both for R&D activities and for pilot production. Maximum diameter of wafers is 150 mm. One of STE RTP150 specific features is separation of heater and with reactor heating wafer. Heater
consists of halogen lamps located outside the reactor and heats graphite table through the quartz window in the process chamber. Such heater allows carrying out processes with maximum temperature up to 1300°С and heating rate up to 150°С/sec. Water-cooled aluminum chamber allows carrying out long-term annealing. Reactor can be preliminary pumped following by process gas venting.


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